In this paper, to minimize the tunneling leakage current, we propose a graphene nanoribbon
(GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between …

In this paper, some important circuit parameters of a monolayer armchair graphene
nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also …

In this paper, we perform a theoretical study on the performance metrics of the lightly doped
drain and source (LDD) of double-material-gate graphene nanoribbon field effect transistors …

By inserting a lightly doped region between the highly doped drain and the intrinsic channel
of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new …

The device physics and performance of heterojunction (HJ) graphene-nanoribbon (GNR)
tunneling field-effect transistors (TFETs) with different designs are investigated in this letter …

In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor
(GNRFET) is offered, which combines the advantages of high and low dielectric constants. In …

In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed
with specific doping profiles are proposed, assessed, and compared with the conventional …

In this paper, for the first time device characteristics of field-effect tunneling transistors based
on vertical graphene-hBN heterostructure (VTGFET) and vertical graphene nanoribbon …

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its
potential to address power concerns in nanoelectronics. The recently discovered graphene …

The performance of graphene nanoribbon field effect transistor (GNR FET) is investigated
from a numerical model based on self-consistent non-equilibrium Green's Function (NEGF) …