We report the optical and electronic properties of intrinsic and doped hydrogenated
amorphous silicon films deposited at 50° C. Comparison of the film properties in the as …

Hydrogenated amorphous silicon films with optical band gaps narrower than 1.7 eV have
been prepared by a chemical annealing process involving the sequential deposition of 10 …

We report the electronic properties, stability, and microstructure of a‐Si: H films grown at
high substrate temperature (320–440° C) by dc reactive magnetron sputtering. The initial …

Raman scattering, infrared absorption, conductivity measurements, electron microprobe,
and secondary ion mass spectrometry (SIMS) were used to characterize boron and …

We report the growth and characterization of both n‐type and p‐type doped hydrogenated
amorphous silicon films prepared by laser‐induced chemical vapor deposition. For both …

We have deposited undoped a-Si: H films with hydrogen content from 0% to 19% with the
substrate temperature near room temperature (Ts= 40° C). We find an “intrinsic” defect …

We have developed an ultrahigh vacuum plasma‐enhanced chemical‐vapor deposition
system, and deposited high‐purity device‐quality hydrogenated amorphous silicon films …

Hydrogenated amorphous silicon (a‐Si: H) films have been fabricated by a plasma chemical
vapor deposition (plasma‐CVD) method at low substrate temperatures (T s: 80 or 50° C) to …

Hydrogenated amorphous silicon (a‐Si: H) films were prepared by remote plasma chemical
vapor deposition (RPCVD) using SiH4/SiH2Cl2/He/H2 mixtures. With increasing Cl content …

The addition of hydrogen during the evaporation of silicon has been shown to improve the
electrical properties of the resulting a-Si film considerably by saturation of dangling bonds, if …