Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography

KJ Byeon, JY Cho, J Kim, H Park, H Lee - Optics express, 2012 - opg.optica.org
SiN_x-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a
GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a …

Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography

KJ Byeon, SY Hwang, H Lee - Applied physics letters, 2007 - pubs.aip.org
The fabrication process of photonic crystals in ap‐Ga N layer was established to improve the
light extraction efficiency of light-emitting diodes (LEDs) by using nanoimprint lithography …

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template

XX Fu, B Zhang, XN Kang, JJ Deng, C Xiong, T Dai… - Optics …, 2011 - opg.optica.org
In this paper, we propose and demonstrate a convenient and flexible approach for
preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip …

Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography

T Wei, K Wu, D Lan, Q Yan, Y Chen, C Du… - Applied Physics …, 2012 - pubs.aip.org
We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO
2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light …

InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer

KH Li, HW Choi - Journal of Applied Physics, 2011 - pubs.aip.org
Photonic crystal patterns on the indium tin oxide layer of an InGaN/GaN light-emitting diode
are fabricated via nanosphere lithography in combination with dry etching. The silica …

Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern

BS Cheng, CH Chiu, KJ Huang, CF Lai… - Semiconductor …, 2008 - iopscience.iop.org
In this paper, we propose a simple, low cost and mass producible nanoimprint lithography
(NIL) method to texture the surface of GaN-based light emitting diodes (LEDs) with a two …

Improved light output power of GaN-based light-emitting diodes using double photonic quasi-crystal patterns

HW Huang, CH Lin, ZK Huang, KY Lee… - IEEE electron device …, 2009 - ieeexplore.ieee.org
The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a
double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is …

Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

K Wu, TB Wei, D Lan, HY Zheng, JX Wang… - Chinese …, 2013 - iopscience.iop.org
Wafer-scale SiO 2 photonic crystal (PhC) patterns (SiO 2 air-hole PhC, SiO 2-pillar PhC) on
indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel …

Fabrication of photonic crystal structure on indium tin oxide electrode of GaN‐based light‐emitting diodes

KJ Byeon, H Park, JY Cho, KY Yang… - … status solidi (a), 2011 - Wiley Online Library
Wafer‐scale UV nanoimprint and dry etching processes were used to fabricate photonic
crystal patterns on an indium tin oxide (ITO) top electrode of GaN‐based green light‐emitting …

III-nitride ultraviolet, blue and green LEDs with SiO2 photonic crystals fabricated by UV-nanoimprint lithography

X Hu, R Wen, Z Qi, H Wang - Materials Science in Semiconductor …, 2018 - Elsevier
In this paper, we report the effect of the SiO 2 photonic crystals (PhCs) on the enhancement
of light-output power (LOP) in the UV, blue and green InGaN light-emitting diodes (LEDs) …