High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
In this letter, we report on the improvement of gate controlled Al 2 O 3/(100) boron doped (B-
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors …
doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors …
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor
A Maréchal, M Aoukar, C Vallée, C Rivière… - Applied Physics …, 2015 - pubs.aip.org
Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer
deposition at 250 C of Al 2 O 3 on oxygen-terminated boron doped (001) diamond. Their …
deposition at 250 C of Al 2 O 3 on oxygen-terminated boron doped (001) diamond. Their …
High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-
type (100) oriented diamond and SiO 2 grown by atomic layer deposition. A detailed …
type (100) oriented diamond and SiO 2 grown by atomic layer deposition. A detailed …
High temperature (300 C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs
Z Ren, D Lv, J Xu, J Zhang, J Zhang, K Su… - Applied Physics …, 2020 - pubs.aip.org
Hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect
transistors (MOSFETs) were fabricated on a polycrystalline diamond substrate. The device …
transistors (MOSFETs) were fabricated on a polycrystalline diamond substrate. The device …
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance
TT Pham, A Maréchal, P Muret, D Eon… - Journal of Applied …, 2018 - pubs.aip.org
Metal oxide semiconductor capacitors were fabricated using p-type oxygen-terminated (001)
diamond and Al 2 O 3 deposited by atomic layer deposition at two different temperatures …
diamond and Al 2 O 3 deposited by atomic layer deposition at two different temperatures …
3326-V modulation-doped diamond MOSFETs
NC Saha, SW Kim, T Oishi… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
This letter reports the fabrication and characterization of 3.3-kV modulation-doped diamond
metal–oxide–semiconductor field-effect transistors (MOSFETs). The modulation doping was …
metal–oxide–semiconductor field-effect transistors (MOSFETs). The modulation doping was …
Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition
Boron-doped diamond (B-diamond) MOS capacitors and MOSFETs are fabricated and
characterized. The Al2O3 gate insulator is deposited by an atomic layer deposition (ALD) …
characterized. The Al2O3 gate insulator is deposited by an atomic layer deposition (ALD) …
Metal oxide semiconductor structure using oxygen-terminated diamond
G Chicot, A Maréchal, R Motte, P Muret… - Applied Physics …, 2013 - pubs.aip.org
Metal-oxide-semiconductor structures with aluminum oxide as insulator and p-type (100)
mono-crystalline diamond as semiconductor have been fabricated and investigated by …
mono-crystalline diamond as semiconductor have been fabricated and investigated by …
Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors
Y Fu, S Kono, H Kawarada… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Metal–oxide–semiconductor (MOS) capacitors with oxidized silicon-terminated (C–Si–O)
diamond as semiconductors and a stack of SiO 2 and Al 2 O 3 as gate insulators were …
diamond as semiconductors and a stack of SiO 2 and Al 2 O 3 as gate insulators were …
[HTML][HTML] Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs
Abstract Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated
(001) diamond and zirconium dioxide deposited by atomic layer deposition at low …
(001) diamond and zirconium dioxide deposited by atomic layer deposition at low …