Effects of vacancy defects on graphene nanoribbon field effect transistor
The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond‐CMOS nanoelectronics because of the special electric …
candidates for beyond‐CMOS nanoelectronics because of the special electric …
Graphene properties and applications in nanoelectronic
Reduction in the dimensions of silicon based devices has produced extraordinary
developments in the performance of electronic systems. Recently, the advantages and …
developments in the performance of electronic systems. Recently, the advantages and …
Impact of symmetry in transport properties of graphene nanoribbons with defects
DG Kvashnin, LA Chernozatonskii - Applied Physics Letters, 2014 - pubs.aip.org
We report a theoretical investigation of the impact of asymmetry in the geometry of graphene
nanoribbons (GNR) on the current-voltage characteristics caused by introducing the …
nanoribbons (GNR) on the current-voltage characteristics caused by introducing the …
Understanding the effect of n-type and p-type doping in the channel of graphene nanoribbon transistor
S Choudhary, V Singh - Bulletin of Materials Science, 2016 - Springer
In this paper, device performance of graphene nanoribbon field effect transistor (GNRFET)
with different doping concentrations in different parts of the channel is reported. The study is …
with different doping concentrations in different parts of the channel is reported. The study is …
Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region
A Naderi - Superlattices and Microstructures, 2016 - Elsevier
A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and
investigated using quantum simulation with a nonequilibrium Green's function (NEGF) …
investigated using quantum simulation with a nonequilibrium Green's function (NEGF) …
Modeling of lightly doped drain and source graphene nanoribbon field effect transistors
M Saremi, M Saremi, H Niazi, AY Goharrizi - Superlattices and …, 2013 - Elsevier
In this paper, to minimize the tunneling leakage current, we propose a graphene nanoribbon
(GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between …
(GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between …
Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects
Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS
nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap …
nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap …
Locally defect-engineered graphene nanoribbon field-effect transistor
H Owlia, P Keshavarzi - IEEE Transactions on Electron Devices, 2016 - ieeexplore.ieee.org
In this paper, we investigate a graphene nanoribbon FET (GNRFET) with locally embedded
Stone-Wales (SW) defects near its drain contact. The simulation procedure is preformed via …
Stone-Wales (SW) defects near its drain contact. The simulation procedure is preformed via …
Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect
In this paper, some important circuit parameters of a monolayer armchair graphene
nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also …
nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also …
Restraining strategy of the Stone–Wales defect effect on graphene nanoribbon MOSFETs
In this letter, armchair graphene nanoribbon (aGNR) metal-oxide-semiconductor field effect
transistors with stone-wales (SW) defects are investigated by the first-principles simulation …
transistors with stone-wales (SW) defects are investigated by the first-principles simulation …