A model of epitaxial growth based on steady-state assumptions is derived and shows that
the decisive quantity determining the film morphology is the additional energy barrier at the …

The efficiency of interlayer mass transport determines the growth mode and film quality in
molecular beam epitaxy. In this paper we report potential energy barriers (PEB) to interlayer …

Reentrant layer-by-layer growth is studied using a Monte Carlo simulation of a solid-on-solid
model. A previously proposed explanation of the phenomenon based on the existence of an …

The influence of strain on diffusion and nucleation has been studied by means of scanning
tunneling microscopy and effective-medium theory for Ag self-diffusion on strained and …

We describe a general method for the quantitative determination of the interlayer mass
transport in epitaxial growth. Through measurement of the nucleation rate on top of islands …

The simple on-top site random-deposition model for film growth on a simple-cubic (100)
substrate is extended to other adsorption-site geometries and crystal structures. Nontrivial …

Abstract 'Epitaxy'means order in the relative orientation of identical crystals nucleated and
grown on a large single-crystal face. Every crystal of the deposited material is oriented in …

We have investigated the epitaxial growth of Ag (111) by x-ray reflectivity experiments. In the
temperature range from 175 to 575 K the growth mode changes gradually from three …

A mechanism for surface-active additives “floating” on the surface of a film during epitaxial
growth is presented and applied to Sb-modified homoepitaxial growth on Ag (111) …

We have investigated the influence of strain on the morphology in metal heteroepitaxy at
temperatures where growth is dominated by kinetics. Whereas Ag (111) homoepitaxy is …