Analyzing hot-carrier effects on cold CMOS devices

SB Bibyk, H Wang, P Borton - IEEE transactions on electron …, 1987 - ieeexplore.ieee.org
The operation of discrete and integrated CMOS ring oscillators was evaluated over the
temperature range 77-300 K. Gate delays typically decreased by a factor of two at 77 K. Hot …

A model for AC hot-carrier degradation in n-channel MOSFETs

K Mistry, B Doyle - IEEE electron device letters, 1991 - ieeexplore.ieee.org
A recently developed model for AC hot-carrier lifetimes is shown to be valid for typical and
worst-case stress waveforms found in CMOS circuits. Three hot-carrier damage mechanisms …

Hot carrier effects on jitter and phase noise in CMOS voltage-controlled oscillators

C Zhang, A Srivastava - Noise in Devices and Circuits III, 2005 - spiedigitallibrary.org
The effects of hot carrier stress on CMOS voltage-controlled oscillators (VCO) are
investigated. A model of the threshold voltage degradation in MOSFETs due to hot carrier …

Thermal effects in n-channel enhancement MOSFET's operated at cryogenic temperatures

DP Foty, SL Titcomb - IEEE Transactions on Electron Devices, 1987 - ieeexplore.ieee.org
Thermal effects in n-channel enhancement-mode MOSFET's operated at cryogenic
temperatures are discussed. Device heating is identified as the cause of drain current …

Hot carrier effects on jitter performance in CMOS voltage-controlled oscillators

C Zhang, A Srivastava - Fluctuation and Noise Letters, 2006 - World Scientific
The effects of hot carrier stress on CMOS voltage-controlled oscillators (VCO) are
investigated. A model of the threshold voltage degradation in MOSFETs due to hot carrier …

A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature

A Acovic, M Dutoit, M Ilegems - IEEE Transactions on Electron …, 1989 - ieeexplore.ieee.org
It is well known that hot-carrier (HC) degradation of NMOSFETs is enhanced at low
temperature (LT). Up to now, this has mainly been attributed to the greater mean free path of …

Transient substrate current generation and device degradation in CMOS circuits at 77K

DH Ju, RK Reich, JW Schrankler… - 1985 International …, 1985 - ieeexplore.ieee.org
The hot-carrier effects on CMOS device characteristics and circuit performance have been
investigated at 77K under pulsed-stress conditions. A CMOS inverter was subjected to a …

Hot carriers in small geometry CMOS

LA Akers, MA Holly, C Lund - 1984 International Electron …, 1984 - ieeexplore.ieee.org
The effects of hot carriers on the electrical behavior of small geometry NMOS and PMOS
devices are reported. Significant changes in device characteristics are shown to occur even …

[PDF][PDF] Simulation of CMOS circuit degradation due to hot-carrier effects

KN Quader, PK Ko, C Hu, P Fang… - IEEE IRPS-92, Tech …, 1992 - researchgate.net
Comparing long term ring-oscillator hot-carrier degradation data and simulation results we
show that a public-domain circuit simulatOr BERT can predict CMOS digital circuit speed …

Modeling of circuits with strongly temperature dependent thermal conductivities for cryogenic CMOS

J Hamlet, K Eng, T Gurrieri, J Levy, M Carroll - Microelectronics journal, 2011 - Elsevier
When designing and studying circuits operating at cryogenic temperatures understanding
local heating within the circuits is critical due to the temperature dependence of transistor …