In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect
Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption …

In this paper, using gate structure engineering and modification of channel dopant profile,
we propose a new double gate graphene nanoribbon field effect transistor (DG-GNRFET) …

In this study, a modified structure was proposed for the band-to-band tunneling field-effect
transistor (BTBT–FET) mainly to suppress the ambipolar current with the assumption that the …

In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed
with specific doping profiles are proposed, assessed, and compared with the conventional …

By inserting a lightly doped region between the highly doped drain and the intrinsic channel
of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new …

In this paper, a tunneling graphene nanoribbon field effect transistor with electrically
activated drain extension, namely, EA-T-GNRFET, is proposed. The proposed structure …

In this paper, we propose a novel tunneling graphene nanoribbon field effect transistor by
modification of the conventional structure in a way that its drain high-doped extension part is …

A new double gate graphene nanoribbon field effect transistor with dual material for gate
namely DMG-GNRFET is proposed. DMG-GNRFET includes a gate which is divided to the …

A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and
investigated using quantum simulation with a nonequilibrium Green's function (NEGF) …

In this paper, a new nanoscale junctionless graphene nanoribbon tunnel field-effect
transistor (JL GNRTFET) is proposed and assessed through a quantum simulation study …