Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …

Electric field control of spin–orbit torque in ferromagnets has been intensively pursued in
spintronics to achieve efficient memory and computing devices with ultralow energy …

We propose a new type of spin-valley locking (SVL), named C-paired SVL, in
antiferromagnetic systems, which directly connects the spin/valley space with the real space …

Efficient electrical switching of antiferromagnets is at the center of their application in high-
density and ultrafast nonvolatile memories. Antiferromagnetic (AFM) Mn 2 Au with opposite …

We investigate the current-induced switching of the Néel order in NiO (001)/Pt
heterostructures, which is manifested electrically via the spin Hall magnetoresistance …

We report reversible strain-induced magnetization switching between two stable/metastable
states in~ 300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT …

There is accelerating interest in developing memory devices using antiferromagnetic (AFM)
materials, motivated by the possibility for electrically controlling AFM order via spin-orbit …

A reversal of magnetization requiring only the application of an electric field can lead to low-
power spintronic devices by eliminating conventional magnetic switching methods. Here we …

In antiferromagnetic spintronics, the read-out of the staggered magnetization or Néel vector
is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for …

Antiferromagnetic spintronics have attracted wide attention due to its great potential in
constructing ultradense and ultrafast antiferromagnetic memory that suits modern high …