The aim of this work is the optoelectronic characterization of double p–i–n stacked devices
based on a-Si alloy materials, in order to evaluate their suitability in large area optical …

The application of a-SiC: H/a-Si: H pinpin photodiodes for optoelectronic applications as a
WDM demultiplexer device has been demonstrated useful in optical communications that …

In this work, we have designed, fabricated and measured the performance of three different
active pixel sensor (APS) structures. These APS structures are studied in the context of …

Results on the use of a double a-SiC: H p–i–n heterostructure for signal multiplexing and
demultiplexing applications in the visible range, are presented. Modulated monochromatic …

A two-dimensional p–i–n imager based on μc-Si: H material is analysed. The basic building
block for the sensor element is a transparent conductive oxide (TCO)/μc-p–i–n Si: H …

It is well known from the literature that, in order to optimize the light power conversion, the
geometry of the cell and the thickness of the absorber layers must be adjusted to the light …

A family of three-terminal three-colour detectors based on stacked a-SiC: H/a-Si: H
heterostructures is presented. The detectors have the assembly TCO/PIN/TCO/PINIP/metal …

Amorphous and microcrystalline glass/ZnO: Al/p (a-Si: H)/i (a-Si: H)/n (a-Si1 C: H)/Al imagers
with different n-layer resistivities were produced by plasma-enhanced chemical vapor …

In this paper, we present results on the use of multilayered a-SiC: H heterostructures as a
device for wavelength-division demultiplexing of optical signals. These devices are useful in …

Amorphous ZnO: Al/a-SixC1–x: Hpin/Al optical imagers that use a small-signal scanning
beam to read out the photogenerated carriers are presented. The effect of the image …