Ultrafast carrier dynamics in InGaAs quantum dot materials and devices
In this paper we review the subject of dephasing processes and population dynamics in self-
assembled InGaAs/GaAs quantum dot materials and devices. Our aim is to give a …
assembled InGaAs/GaAs quantum dot materials and devices. Our aim is to give a …
Ultrafast carrier dynamics of resonantly excited 1.3-μm InAs/GaAs self-assembled quantum dots
We report the carrier dynamics of 1.3-μm InAs quantum dots (QDs), following resonant
excitation in the lowest energy state of QDs. The strong temperature dependence of the …
excitation in the lowest energy state of QDs. The strong temperature dependence of the …
Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots
We have used two-and three-pulse femtosecond differential transmission spectroscopy to
study the dependence of quantum dot carrier dynamics on temperature. At low temperatures …
study the dependence of quantum dot carrier dynamics on temperature. At low temperatures …
Role of the continuum background for carrier relaxation in InAs quantum dots
EW Bogaart, JEM Haverkort, T Mano, T Van Lippen… - Physical Review B …, 2005 - APS
We study the carrier capture and relaxation in self-assembled In As∕ Ga As quantum dots
(QDs) using bleaching rise time measurements as a function of the excitation density, at 5 …
(QDs) using bleaching rise time measurements as a function of the excitation density, at 5 …
Spin-preserving ultrafast carrier capture and relaxation in InGaAs quantum dots
S Trumm, M Wesseli, HJ Krenner, D Schuh… - Applied Physics …, 2005 - pubs.aip.org
Carrier capture into self-organized InGaAs∕ GaAs quantum dots with an electronic level
spacing close to optical phonon energies is studied in a two-color femtosecond transmission …
spacing close to optical phonon energies is studied in a two-color femtosecond transmission …
Coulomb and carrier-activation dynamics of resonantly excited InAs/GaAs quantum dots in two-color pump-probe experiments
We study Coulomb and carrier dynamics in self-assembled InAs/GaAs quantum dots at room
temperature by two-color tunable differential transmission experiments, with resonant …
temperature by two-color tunable differential transmission experiments, with resonant …
Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAs quantum dots
M De Giorgi, C Lingk, G Von Plessen… - Applied physics …, 2001 - pubs.aip.org
We investigate the ultrafast carrier dynamics in metalorganic chemical vapor deposition-
grown InGaAs/GaAs quantum dots emitting at 1.3 μm. Time-resolved photoluminescence …
grown InGaAs/GaAs quantum dots emitting at 1.3 μm. Time-resolved photoluminescence …
Time-resolved studies of annealed InAs/GaAs self-assembled quantum dots
S Malik, EC Le Ru, D Childs, R Murray - Physical Review B, 2001 - APS
We have investigated the carrier dynamics in annealed quantum dots where the energy-
level separation of the optical transitions can be tuned between 68 and 19 meV …
level separation of the optical transitions can be tuned between 68 and 19 meV …
Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
F Adler, M Geiger, A Bauknecht, F Scholz… - Journal of Applied …, 1996 - pubs.aip.org
We present experimental results concerning optical transitions and carrier dynamics
(capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by …
(capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by …
Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots
KW Sun, A Kechiantz, BC Lee, CP Lee - Applied physics letters, 2006 - pubs.aip.org
We report investigations on carrier capture and relaxation processes in undoped and
modulation-doped In As∕ Ga As self-assembled quantum dots (QDs) by using time …
modulation-doped In As∕ Ga As self-assembled quantum dots (QDs) by using time …