Energy level alignment at interfaces of organic semiconductor heterostructures
… Ideally, carriers are confined at the interface by such a barrier within the emissive layer, …
interface. It is usually assumed that the vacuum levels of the two materials align at the interface.…
interface. It is usually assumed that the vacuum levels of the two materials align at the interface.…
Organic semiconductor interfaces: electronic structure and transport properties
… vacuum levels aligned at metal/organic interfaces, and that ideal Schottky–Mott behavior
would result. Similarly, vacuum level … of organic semiconductor interfaces and summarize our …
would result. Similarly, vacuum level … of organic semiconductor interfaces and summarize our …
Interface states at metal-compound semiconductor junctions
LJ Brillson, S Chang, J Shaw, RE Viturro - Vacuum, 1990 - Elsevier
… CLS and PL also reveal that deep levels resident in the semiconductor bulk can … metal-semiconductor
interface. By controlling atomicscale interface chemistry, one can affect deep level …
interface. By controlling atomicscale interface chemistry, one can affect deep level …
Fermi level dependent native defect formation: consequences for metal–semiconductor and semiconductor–semiconductor interfaces
W Walukiewicz - Journal of Vacuum Science & Technology B …, 1988 - pubs.aip.org
… the Fermi level pinning at metal/semiconductor interfaces for … interfaces show a weak
dependence of the Fermi level … defect formation energy on the Fenni level, a unique feature of …
dependence of the Fermi level … defect formation energy on the Fenni level, a unique feature of …
Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces
H Hasegawa, H Ohno - Journal of Vacuum Science & Technology B …, 1986 - pubs.aip.org
… -semiconductor (IS) interface and the Fermi-level pinning position at the metal-semiconductor
(MS) interface … eV from the vacuum level for major tetrahedral semiconductors. Neither the …
(MS) interface … eV from the vacuum level for major tetrahedral semiconductors. Neither the …
On the Fermi level pinning behavior of metal/III–V semiconductor interfaces
N Newman, WE Spicer, T Kendelewicz… - Journal of Vacuum …, 1986 - pubs.aip.org
… paper the interface Fermi level pinning behavior for thick film diodes wil1 be obtained
exclusively from IV barrier height determinations which have been corrected for the image force. …
exclusively from IV barrier height determinations which have been corrected for the image force. …
Molecular level alignment at organic semiconductor-metal interfaces
… The vacuum alignment rule corresponds to SB … for inorganic semiconductor interfaces, the
vacuum level alignment rule had been expected to hold for the weakly interacting interfaces …
vacuum level alignment rule had been expected to hold for the weakly interacting interfaces …
Kelvin probe study of band bending at organic semiconductor/metal interfaces: examination of Fermi level alignment
H Ishii, N Hayashi, E Ito, Y Washizu… - … status solidi (a), 2004 - Wiley Online Library
… are aligned at the common vacuum level between the two solids. When the two solids become
contact, MS model assumes (i) vacuum level alignment right at the interface region and (ii…
contact, MS model assumes (i) vacuum level alignment right at the interface region and (ii…
Surface analytical studies of interfaces in organic semiconductor devices
Y Gao - Materials Science and Engineering: R: Reports, 2010 - Elsevier
… In organic/organic interface, the energy offset between the two dissimilar organic materials
… interface in organic photovoltaic devices (OPV). I will discuss the interface energy level …
… interface in organic photovoltaic devices (OPV). I will discuss the interface energy level …
Fermi level, work function and vacuum level
A Kahn - Materials Horizons, 2016 - pubs.rsc.org
… an organic semiconductor, can change work function and vacuum level position by a large
fraction of an electron-volt, and significantly impact the electronic structure of interfaces. The …
fraction of an electron-volt, and significantly impact the electronic structure of interfaces. The …
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