… junctions (MFTJs) may serve as four-state resistance devices. On the basis of first-principles
calculations, we demonstrate four resistance states in … We find that the resistance of such a …

… TER at room temperature in solid-state ferroelectric tunnel junctions and qualify them as
high-… Figure 4a shows the ON and OFF resistance states for 50 junctions with an average OFF/…

… Sr 0.3 MnO 3 junctions show that intermediate resistance states between the ON and OFF …
7) tunnel junctions in various intermediate states and the parallel resistance model suggests a …

… These junctions thus define a four-resistance-state system and constitute an important
step towards the integration of nanometric multiferroic elements in spintronics devices. …

… sizable change in resistance of the junction—a phenomenon … development of the ferroelectric
tunnel junction concept and the … of ferroelectric tunnel junctions and summarise the state-of-…

… tunnel barrier is made from a 9 Å thick layer of Al metal that is plasma oxidized. The resistance
of the tunnel junction … The characteristic lifetimes in the high resistance state can vary from …

… We present the concept of ferroelectric tunnel junctions FTJs. These junctions consist of two
metal … Therefore, at zero voltage an “inversion” of the junction resistance state takes place, …

… from high to low resistance states occurred exactly at the same … tunnel junctions and a
drastic change in resistance (Figure 4). In the case of the 4.8 nm thick BaTiO 3 film, the resistance …

… 2 for a 1 mm2 area tunnel junction with a 7 mΩ resistance we find … resistance state). Recently,
new measurements have been presented by this group on microfabricated tunnel junctions …

… ON junction states including those from junction #1 depicted in Figure 4a. The resistance states
of two junctions in the virgin state (junctions #… with a direct tunneling transport through the …