Recessed-gate enhancement-mode GaN MOSFETs with a double-insulator gate providing 10-MHz switching operation

J Kashiwagi, T Fujiwara, M Akutsu, N Ito… - IEEE electron device …, 2013 - ieeexplore.ieee.org
Recessed-gate GaN metal-oxide-semiconductor field-effect transistors with a double-
insulator gate configuration demonstrate 10-MHz switching operation of which delay time …
被引用次数：47 相关文章

[引用][C] Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

J Kashiwagi, T Fujiwara, M Akutsu, N Ito… - IEEE Electron Device …, 2013 - infona.pl
Recessed-gate GaN metal-oxide-semiconductor field-effect transistors with a double-
insulator gate configuration demonstrate 10-MHz switching operation of which delay time is …

[引用][C] Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

J Kashiwagi, T Fujiwara, M Akutsu, N Ito… - IEEE Electron Device …, 2013 - cir.nii.ac.jp
Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing
10-MHz Switching Operation | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ …

[引用][C] Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

J KASHIWAGI, T FUJIWARA… - IEEE electron …, 2013 - pascal-francis.inist.fr
Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate
Providing 10-MHz Switching Operation CNRS Inist Pascal-Francis CNRS Pascal and …

[引用][C] Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

J Kashiwagi, T Fujiwara, M Akutsu… - IEEE Electron …, 2013 - ui.adsabs.harvard.edu
Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing
10-MHz Switching Operation - NASA/ADS Now on home page ads icon ads Enable full ADS …