Droop improvement in high current range on PSS-LEDs

S Tanaka, I Koslow, CC Pan, HT Chen, J Sonoda… - Electronics letters, 2011 - IET
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating
a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was …
被引用次数：30 相关文章

Droop improvement in high current range on PSS-LEDs

S Tanaka, Y Zhao, I Koslow, CC Pan… - Electronics …, 2011 - search.proquest.com
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating
a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was …
[PDF] archive.org

[PDF][PDF] Droop improvement in high current range on PSS-LEDs

S Tanaka, Y Zhao, I Koslow, CC Pan… - ELECTRONICS …, 2011 - scholar.archive.org
Results: A schematic of the device structure is shown in Fig. 1. The typical temperature
range was 10508C for the n-type GaN layer, with a V/lll ratio (the ratio of NH3 mole fraction …

Droop improvement in high current range on PSS-LEDs

S Tanaka, Y Zhao, I Koslow, CC Pan, HT Chen… - Electronics Letters, 2011 - infona.pl
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating
a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was …

[引用][C] Droop improvement in high current range on PSS-LEDs

S Tanaka, Y Zhao, I Koslow, CC Pan, HT Chen… - Electronics Letters, 2011 - cir.nii.ac.jp
Droop improvement in high current range on PSS-LEDs | CiNii Research CiNii 国立情報学
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[引用][C] Droop improvement in high current range on PSS-LEDs

S TANAKA, Y ZHAO, I KOSLOW, CC PAN… - Electronics …, 2011 - pascal-francis.inist.fr
Droop improvement in high current range on PSS-LEDs CNRS Inist Pascal-Francis CNRS
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …

[引用][C] Droop improvement in high current range on PSS-LEDs

S Tanaka, Y Zhao, I Koslow, CC Pan… - Electronics …, 2011 - ui.adsabs.harvard.edu
Droop improvement in high current range on PSS-LEDs - NASA/ADS Now on home page ads
icon ads Enable full ADS view NASA/ADS Droop improvement in high current range on …
[PDF] asu.edu

[PDF][PDF] Droop improvement in high current range on PSS-LEDs

S Tanaka, Y Zhao, I Koslow, CC Pan… - ELECTRONICS …, 2011 - labs.engineering.asu.edu
Results: A schematic of the device structure is shown in Fig. 1. The typical temperature
range was 10508C for the n-type GaN layer, with a V/lll ratio (the ratio of NH3 mole fraction …

Droop improvement in high current range on PSS-LEDs

S Tanaka, Y Zhao, I Koslow, CC Pan… - Electronics …, 2011 - asu.elsevierpure.com
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating
a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was …

[引用][C] Droop improvement in high current range on PSS-LEDs

S TANAKA, Y ZHAO, I KOSLOW… - Electronics …, 2011 - Institution of Engineering and …