Accurate strain measurements in highly strained Ge microbridges
JM Hartmann, YM Niquet - Applied Physics Letters, 2016 - pubs.aip.org
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
[PDF][PDF] Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, GO Dias… - APPLIED PHYSICS …, 2016 - academia.edu
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, GO Dias, N Pauc… - Applied Physics …, 2016 - cir.nii.ac.jp
抄録< jats: p> Ge under high strain is predicted to become a direct bandgap semiconductor.
Very large deformations can be introduced using microbridge devices. However, at the …
Very large deformations can be introduced using microbridge devices. However, at the …
[PDF][PDF] Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, GO Dias… - APPLIED PHYSICS …, 2016 - dora.lib4ri.ch
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, GO Dias, N Pauc… - Applied Physics …, 2016 - hal.science
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, GO Dias, N Pauc… - arXiv preprint arXiv …, 2016 - arxiv.org
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy… - Applied Physics …, 2016 - ui.adsabs.harvard.edu
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias… - Applied Physics …, 2016 - pubs.aip.org
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, GO Dias… - Applied Physics …, 2016 - cea.hal.science
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …
[PDF][PDF] Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, GO Dias… - APPLIED PHYSICS …, 2016 - academia.edu
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …
deformations can be introduced using microbridge devices. However, at the microscale …