Enhancement of photodetectors devices for silicon nanostructure from study effect of etching time by photoelectrochemical etching Technique

NA Abdulkhaleq, AK Hasan, UM Nayef - Optik, 2020 - Elsevier
Porous silicon (PS) prepared from n-type silicon via photoelectrochemical etching (PECE)
technique. The morphology properties of PS specimens that formed with different etching …
被引用次数：52 相关文章

Enhancement of photodetectors devices for silicon nanostructure from study effect of etching time by photoelectrochemical etching technique

NA Abdulkhaleq, AK Hasan, UM Nayef - Optik, 2020 - ui.adsabs.harvard.edu
Porous silicon (PS) prepared from n-type silicon via photoelectrochemical etching (PECE)
technique. The morphology properties of PS specimens that formed with different etching …

[引用][C] Enhancement of photodetectors devices for silicon nanostructure from study effect of etching time by photoelectrochemical etching technique

NA Abdulkhaleq, AK Hasan, UM Nayef - Optik, 2020 - ui.adsabs.harvard.edu
Enhancement of photodetectors devices for silicon nanostructure from study effect of etching
time by photoelectrochemical etching technique - NASA/ADS Now on home page ads icon ads …