High-performance, tensile-strained Ge pin photodetectors on a Si platform
We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
[PDF][PDF] High-performance, tensile-strained Ge pin photodetectors on a Si platform
J Liu, J Michel, W Giziewicz, D Pan… - APPLIED PHYSICS …, 2005 - scholar.archive.org
We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
High-performance, tensile-strained Ge pin photodetectors on a Si platform
J Liu, J Michel, W Giziewicz, D Pan, K Wada… - Applied Physics …, 2005 - cir.nii.ac.jp
抄録< jats: p> We demonstrate a high-performance, tensile-strained Ge pin photodetector on
Si platform with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of …
Si platform with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of …
[PDF][PDF] High-performance, tensile-strained Ge photodetectors on a Si platform
J Liu, J Michel, W Giziewicz, D Pan… - APPLIED PHYSICS …, 2005 - web4.bilkent.edu.tr
We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
High-performance, tensile-strained Ge pin photodetectors on a Si platform
J Liu, J Michel, W Giziewicz, D Pan… - Applied Physics …, 2005 - ui.adsabs.harvard.edu
We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650-1605 nm and a 3 dB bandwidth of 8.5 GHz …
with an extended detection spectrum of 650-1605 nm and a 3 dB bandwidth of 8.5 GHz …
High-performance, tensile-strained Ge pin photodetectors on a Si platform
J Liu, J Michel, W Giziewicz, D Pan, K Wada… - Applied Physics …, 2005 - pubs.aip.org
We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
[PDF][PDF] High-performance, tensile-strained Ge pin photodetectors on a Si platform
J Liu, J Michel, W Giziewicz, D Pan… - APPLIED PHYSICS …, 2005 - researchgate.net
We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
[引用][C] High-performance, tensile-strained Ge pin photodetectors on a Si platform
J LIU - Appl. Phys. Lett., 2005 - cir.nii.ac.jp
[PDF][PDF] High-performance, tensile-strained Ge pin photodetectors on a Si platform
J Liu, J Michel, W Giziewicz, D Pan… - APPLIED PHYSICS …, 2005 - scholar.archive.org
We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …