Semiconductor device simulation

W Fichtner, DJ Rose, RE Bank - SIAM Journal on Scientific and Statistical …, 1983 - SIAM
The most effective way to design VLSI device structures is to use sophisticated, complex two-
dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] …
被引用次数：209 相关文章

Semiconductor Device Simulation

W Fichtner, DJ Rose, RE Bank - SIAM Journal on Scientific …, 1983 - search.proquest.com
The most effective way to design VLSI device structures is to use sophisticated, complex two-
dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] …

Semiconductor device simulation

W Fichtner, DJ Rose, RE Bank - IEEE Transactions on Electron …, 1983 - ieeexplore.ieee.org
The most effective way to design VLSI device structures is to use sophisticated, complex two-
dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] …

Semiconductor device simulation

W Fichtner, DJ Rose, RE Bank - IEEE Transactions on …, 1983 - ui.adsabs.harvard.edu
The most effective way to design VLSI device structures is to use sophisticated, complex two-
dimensional (2D) and three-dimensional (3D) models. This paper and its companion (Bank …

Semiconductor Device Simulation

W Fichtner, DJ Rose, RE Bank - SIAM Journal on Scientific and …, 1983 - dl.acm.org
The most effective way to design VLSI device structures is to use sophisticated, complex two-
dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] …