High-performance nanowire oxide photo-thin film transistor.
Advanced Materials (Deerfield Beach, Fla.), 2013 - europepmc.org
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography
and conventional dry etch processing.. The device characteristics are good, including …
and conventional dry etch processing.. The device characteristics are good, including …
High‐Performance Nanowire Oxide Photo‐Thin Film Transistor
SE Ahn, S Jeon, YW Jeon, C Kim, MJ Lee, CW Lee… - Advanced …, 2013 - infona.pl
A gate‐modulated nanowire oxide photosensor is fabricated by electron‐beam lithography
and conventional dry etch processing.. The device characteristics are good, including …
and conventional dry etch processing.. The device characteristics are good, including …
[引用][C] High-Performance Nanowire Oxide Photo-Thin Film Transistors
SE Ahn, S Jeon, YW Jeon, C Kim, MJ Lee… - ADVANCED …, 2013 - koasas.kaist.ac.kr
DSpace at KOASAS: High-Performance Nanowire Oxide Photo-Thin Film Transistors KOASAS
menu About KOASAS KAIST Library 검색 Advanced Search Browse Communities & Collections …
menu About KOASAS KAIST Library 검색 Advanced Search Browse Communities & Collections …
[引用][C] High‐Performance Nanowire Oxide Photo‐Thin Film Transistor
SE Ahn, S Jeon, YW Jeon, C Kim, MJ Lee… - Advanced …, 2013 - Wiley Online Library
In the past decade, interactive displays have contributed to making this the era of information
sharing, since they have made huge functional and performance advances, such as multi …
sharing, since they have made huge functional and performance advances, such as multi …
High-performance nanowire oxide photo-thin film transistor
SE Ahn, S Jeon, YW Jeon, C Kim… - Advanced …, 2013 - pubmed.ncbi.nlm.nih.gov
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography
and conventional dry etch processing.. The device characteristics are good, including …
and conventional dry etch processing.. The device characteristics are good, including …
High-performance nanowire oxide photo-thin film transistor
SE Ahn, S Jeon, YW Jeon, C Kim, MJ Lee… - Advanced …, 2013 - dgist.elsevierpure.com
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography
and conventional dry etch processing. The device characteristics are good, including …
and conventional dry etch processing. The device characteristics are good, including …
High-performance nanowire oxide photo-thin film transistor
SE Ahn, S Jeon, YW Jeon, C Kim, MJ Lee… - Advanced …, 2013 - pure.kaist.ac.kr
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography
and conventional dry etch processing. The device characteristics are good, including …
and conventional dry etch processing. The device characteristics are good, including …
[引用][C] High‑Performance Nanowire Oxide Photo‑Thin Film Transistor
SE Ahn, S Jeon, YW Jeon, C Kim, MJ Lee… - Advanced …, 2013 - ui.adsabs.harvard.edu
High‑Performance Nanowire Oxide Photo‑Thin Film Transistor - NASA/ADS Now on home page
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