384 nm laser diode grown on a (202¯ 1) semipolar relaxed AlGaN buffer layer
We demonstrate an electrically injected semipolar (20 2 1) laser diode grown on a partially
relaxed AlGaN buffer layer. The coherency stresses are relaxed by misfit dislocations at the
GaN/AlGaN heterointerface which form by glide of preexisting threading dislocations along
the (0001) basal plane. The defects are confined to the heterointerface which allows the
growth of high aluminum composition films with threading dislocation densities of less than
10 8 cm− 2. The lasing wavelength was 384 nm with a threshold current density of 15.7 …
relaxed AlGaN buffer layer. The coherency stresses are relaxed by misfit dislocations at the
GaN/AlGaN heterointerface which form by glide of preexisting threading dislocations along
the (0001) basal plane. The defects are confined to the heterointerface which allows the
growth of high aluminum composition films with threading dislocation densities of less than
10 8 cm− 2. The lasing wavelength was 384 nm with a threshold current density of 15.7 …
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