A pressure sensor based on a HBAR micromachined structure
T Baron, D Gachon, JP Romand… - 2010 IEEE …, 2010 - ieeexplore.ieee.org
2010 IEEE International Frequency Control Symposium, 2010•ieeexplore.ieee.org
In this work, we propose a pressure sensor fabricated on compound LiNbO 3/Silicon/Silicon
substrates obtained by Au/Au bonding at room temperature and double face
lapping/polishing of LiNbO 3/silicon stack and a final gold bonding with a structured silicon
wafer. Sensitivity of the final sensor to bending moments then is tested and results show
pressure sensitivity of such devices.
substrates obtained by Au/Au bonding at room temperature and double face
lapping/polishing of LiNbO 3/silicon stack and a final gold bonding with a structured silicon
wafer. Sensitivity of the final sensor to bending moments then is tested and results show
pressure sensitivity of such devices.
In this work, we propose a pressure sensor fabricated on compound LiNbO 3 /Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO 3 /silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.
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