A Tiny Complementary Oscillator With 1/f3 Noise Reduction Using a Triple-8-Shaped Transformer
IEEE Solid-State Circuits Letters, 2020•ieeexplore.ieee.org
This letter presents a triple-8-shaped transformer-based complementary oscillator. It features
tiny area, wide tuning range (TR), electromagnetic compatibility (EMC), and low flicker
phase noise (PN), combining the merits of both LC-tank and ring oscillators. We identify that
after suppressing the second-harmonic voltage by the complementary operation itself, the
third-harmonic current entering the capacitive path is now the main cause of asymmetry in
the rising and falling edges, leading to the 1/f noise upconversion. By tuning the capacitance …
tiny area, wide tuning range (TR), electromagnetic compatibility (EMC), and low flicker
phase noise (PN), combining the merits of both LC-tank and ring oscillators. We identify that
after suppressing the second-harmonic voltage by the complementary operation itself, the
third-harmonic current entering the capacitive path is now the main cause of asymmetry in
the rising and falling edges, leading to the 1/f noise upconversion. By tuning the capacitance …
This letter presents a triple-8-shaped transformer-based complementary oscillator. It features tiny area, wide tuning range (TR), electromagnetic compatibility (EMC), and low flicker phase noise (PN), combining the merits of both LC-tank and ring oscillators. We identify that after suppressing the second-harmonic voltage by the complementary operation itself, the third-harmonic current entering the capacitive path is now the main cause of asymmetry in the rising and falling edges, leading to the 1/f noise upconversion. By tuning the capacitance ratio between gate and drain nodes of the switching transistors, it mitigates the third-harmonic voltage and introduces a specific gate-drain phase shift, reducing the 1/f 3 PN. Fabricated in 22-nm FDSOI CMOS, the prototype occupies an area of 0.01 mm 2 and achieves 1/ 3 PN corner of 70 kHz, PN of -110 dBc/Hz @1MHz and Figure-of-Merit (FoM) of -182 dB at 9 GHz, 39% TR, resulting in the best FoM with normalized TR and area (FoM TA ) of -214 dB@1 MHz.
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