A wideband and compact GaN MMIC Doherty amplifier for microwave link applications
D Gustafsson, JC Cahuana… - IEEE Transactions …, 2013 - ieeexplore.ieee.org
IEEE Transactions on Microwave Theory and Techniques, 2013•ieeexplore.ieee.org
This paper addresses the limitations and difficulties, in terms of DC-current density
restrictions, and process limitations, associated with implementing impedance inverters with
high characteristic impedance for monolithic microwave integrated circuit (MMIC) Doherty
power amplifiers (DPAs). It is theoretically shown that impedance inverters with high
characteristic impedance can be realized by utilizing the output capacitance of the active
devices, together with a compact Tee-network of transmission lines with feasible linewidths …
restrictions, and process limitations, associated with implementing impedance inverters with
high characteristic impedance for monolithic microwave integrated circuit (MMIC) Doherty
power amplifiers (DPAs). It is theoretically shown that impedance inverters with high
characteristic impedance can be realized by utilizing the output capacitance of the active
devices, together with a compact Tee-network of transmission lines with feasible linewidths …
This paper addresses the limitations and difficulties, in terms of DC-current density restrictions, and process limitations, associated with implementing impedance inverters with high characteristic impedance for monolithic microwave integrated circuit (MMIC) Doherty power amplifiers (DPAs). It is theoretically shown that impedance inverters with high characteristic impedance can be realized by utilizing the output capacitance of the active devices, together with a compact Tee-network of transmission lines with feasible linewidths. The utility of the impedance inverter is proven by design and fabrication of a GaN MMIC-DPA for microwave link applications. Continuous wave (CW) measurements demonstrate a maximum output power of 35±0.5dBm over a frequency range of 6.6-8.5 GHz. The power added efficiency (PAE) in 9 dB output power back-off (OPBO) is better than 30% in a frequency range of 6.7-7.8 GHz. Moreover, linearized modulated measurements, employing a 10 MHz 256-QAM signal with 7.8 dB peak to average power ratio (PAPR), demonstrate higher than 35% average PAE, with 27.5 ± 0.2 dBm average output power, and an adjacent channel power ratio (ACPR) less than -45 dBc, across a 6.8-8.5 GHz frequency range. The fabricated chip-size measures 2.1 mm × 1.5mm.
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