… in future silicon metal-oxide-semiconductor field effect … any magnetic effects that hafnium
oxide might possess. We show that electronic grade hafnium oxide and hafnium silicate films …

… The lack of proportionality of magnetic moment and film thickness indicates an origin at the
film surface or the interface with the substrate, rather than in the bulk. The difference in the …

… the absence of features in the Hf N3-edge magnetic circular … of the oxygen vacancy in hafnium
oxide on its electronic … absorption spectra of two hafnium oxide films: one is stoichiometric …

… films grown by sputtering. Like recent reports[10, 16], we do not observe ferromagnetism in
stoichiometric HfO2 films… Absence of magnetism in hafnium oxide films. Appl Phys Lett, 2005, …

… study of properties of hafnium oxide (HfO 2 ) films, deposited by … deposited films proved the
amorphous structure of the films, … in microelectronics faces serious problems due to the lack of …

… based on iron and hafnium oxides are scarce. Crystallization … of functional thin films consisting
of iron and hafnium oxides, … the magnetic field from −1.5 to 1.5 T parallel to the film surface …

… thick hafnium oxide film and show that some ferroelectricity can persist in pure hafnium oxide
films … the O Vac concentration can be manipulated in the absence of dopants, which have a …

… range, in contrast to hafnia films with other dopants. A qualitative … oxidation of the electrodes
during annealing, resulting in a different density of oxygen vacancies in the Gd: HfO 2 films…

… Hafnium oxide (HfO 2 ) has special technological … magnetic property, we employ a modified
bound magnetic polaron-… earlier XRD finding that the absence of any significant secondary …

… High temperature ferromagnetism in thin films of dilute magnetic oxides … 2 is equivalent to
0.12 μ B per hafnium, which would … The lack of thickness dependence provides a clue. It is only …