Ageing mediated silicon suboxide interlayer growth in porous silicon: p-Si heterostructured metal-semiconductor-metal device for enhanced UV-visible photodetection
Present work reports development of silicon oxide within metal-semiconductor-metal
Schottky contact photodiode from Al: porous silicon (PS): p-Si heterojunction mediated by
ageing to investigate its effect on its light sensing property. Oxide layer formation is achieved
by auto-ageing. Formation of silicon suboxide (SiO x, x≤ 2) layers on PS: p-Si surface in
aged heterostructure is confirmed from elemental energy dispersive X-ray analyses. X-ray
diffraction patterns of as-prepared and aged heterostructure show broadening of strong …
Schottky contact photodiode from Al: porous silicon (PS): p-Si heterojunction mediated by
ageing to investigate its effect on its light sensing property. Oxide layer formation is achieved
by auto-ageing. Formation of silicon suboxide (SiO x, x≤ 2) layers on PS: p-Si surface in
aged heterostructure is confirmed from elemental energy dispersive X-ray analyses. X-ray
diffraction patterns of as-prepared and aged heterostructure show broadening of strong …
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