Aluminum doped zinc oxide (AZO) films were studied as an alternative transparent electrode
material to indium tin oxide (ITO) in organic photovoltaic devices. The AZO films were
prepared by atomic layer deposition from diethylzinc, water and trimethylaluminum
precursors. The same number of deposition cycles resulted in 170 and 90nm thick films at
deposition temperatures of 150 and 250° C, respectively. Uniform films with wedge-shaped
crystallites were observed at both temperatures. The functionality of the AZO electrodes in …

We obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD).
Their morphology, growth mode, optical and electrical properties are studied. Al content
dependence is analyzed. Carrier scattering mechanisms in ZnO: Al (AZO) films are
investigated from conductivity versus temperature measurements. We also discuss how the
film thickness affects its resistivity and optical transmission. The obtained film resistivities, ie
7× 10− 4 Ωcm, belong to the lowest reported so far for transparent ZnO: Al films grown by the …