We report a room temperature study on the electrical response of field-effect transistors (FETs) based on few-layered MoSe₂, grown by a chemical vapor transport technique, mechanically exfoliated onto SiO₂. In contrast to previous reports on MoSe₂ FETs electrically contacted with Ni, MoSe₂ FETs electrically contacted with Ti display ambipolar behavior with current on to off ratios up to 10⁶ for both hole and electron channels when applying a small excitation voltage. A rather small hysteresis is observed when sweeping the back-gate voltage between positive and negative values, indicating the near absence of charge “puddles”. For both channels the Hall effect indicates Hall mobilities μ_H ≃ 250 cm²/(V s), which are comparable to the corresponding field-effect mobilities, i.e., μ_FE ∼ 150 to 200 cm²/(V s) evaluated through the conventional two-terminal field-effect configuration. Therefore, our results suggest that MoSe₂ could be a good candidate for p–n junctions composed of a single atomic layer and for low-power, complementary logic applications.