An analytical approach to analyze the dark current–voltage (I–V) and dynamic impedance vs
reverse bias voltage (Rd–V) characteristics of an HgCdTe junction diode is presented in this
paper. Application to the experimental data is discussed to illustrate the approach. It is
shown that the relative contributions of the various dark current contributing mechanisms viz.
diffusion, generation–recombination, thermal trap assisted tunneling, band-to-band
tunneling, avalanche multiplication and ohmic current component can all be isolated, if …

Shodhganga@INFLIBNET: Analysis of dark current contributions in mercury cadmium
telluride junction diodes … Title: Analysis of dark current contributions in mercury cadmium
telluride junction diodes … Telluride …