Analytical modeling of spacer-engineered reconfigurable silicon nanowire Schottky barrier transistor for biosensing applications
In this work, we present a comprehensive analytical model for the Spacer-Engineered
Reconfigurable Silicon Nanowire Schottky Barrier Transistor (SE R–Si NW SBT) for
biosensing applications. This device operates in both n-mode and p-mode configurations by
incorporating dual gates located near the source and drain terminals. The electrostatic
integrity of the device is enhanced by incorporating high-K spacers on both sides of the gate
electrode, facilitating improved interaction between the gate and the Schottky barrier. The …
Reconfigurable Silicon Nanowire Schottky Barrier Transistor (SE R–Si NW SBT) for
biosensing applications. This device operates in both n-mode and p-mode configurations by
incorporating dual gates located near the source and drain terminals. The electrostatic
integrity of the device is enhanced by incorporating high-K spacers on both sides of the gate
electrode, facilitating improved interaction between the gate and the Schottky barrier. The …
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