… A plasma-like atomic layer etching process was first demonstrated for GaAs devices using an
… At the same time, the roughness we predict is probably a worst case scenario in that some …

… etching technology introduced by the semiconductor device … This is undesirable, since it is
expensive from several points … main etch and atomic layer etching in the same conventional …

… is completely analogous to that observed on the same … reducing a three atom layer to a
single atom layer and ignoring … a useful model for etching tiny device structures when combined …

… constant value of about l/2 atomic layer per cycle for Si( 100) … for layer-by-layer etching
using the present ECR apparatus. … atoms is assumed to be the same as that of the surface Si …

… Self-limited atomic-layer etching of Si and Ge was realized … cyclotron resonance ECR plasma
apparatus, the details of … within only about one atomic layer from the surface are removed …

… At the same time, fabrication process issues specific for mechanical structures were … of the
sacrificial layer etch front. HF etchants are convenient for poly-Si devices but attack aluminum …

… Figure 2 shows the schematic diagram of an AFM-based electrochemical etching apparatus
… 8b), which indicates a single-atomic-layer etching of the HOPG surface. Furthermore, Fig. 9…

… To fulfill this demand, cyclic atomic level/layer etching will … Atomic layer deposition (ALD),
which is a counterpart of ALEt… ten cycles of etching, and one after 40 cycle etchings are shown …

… same time. They could have tried to convert their Si etching process to a plasma Si ALE
process … Si 3 N 4 also has many other uses in optical and optoelectronic devices because of its …

… etching of 3D semiconductor devices and of MEMS devices have been reviewed in two recent
reviews. For the former devices … atmospheric spatial ALD of SiO 2 using the same H 2 Si(N(…