We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free
highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN
substrates. Lasing is demonstrated at room temperature under pulsed electrical injection.
The high lasing threshold current density still prevents devices from continuous wave lasing
because of large self-heating. The reasons for such a high threshold are discussed and we
show that it mainly comes from large light absorption in the indium tin oxide current …