A new touch sensor device has been demonstrated with molybdenum disulfide (MoS 2) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride–trifluoroethylene (PVDF–TrFE). The performance of two device stack structures, metal/PVDF–TrFE/MoS 2 (MPM) and metal/PVDF–TrFE/Al 2 O 3/MoS 2 (MPAM), were compared as a function of the thickness of PVDF–TrFE and Al 2 O 3. The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al 2 O 3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles.