Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) can be easily synthesized on SiO₂/Si substrates by chemical vapor deposition (CVD). However, for practical applications, those 2D crystals usually need to be retrieved and placed onto target substrates. Hence, a robust and effective transfer process is required. Currently, the most widely used approach for transferring CVD-grown TMDs involves the spin-coating of a poly(methyl methacrylate) (PMMA) support layer, followed by the wet etching of the SiO₂ layer in hot NaOH. This transfer process often causes substantial accumulation of polymer residues as well as severe structural damage of TMDs induced during the etching of substrates at elevated temperatures. In this work, we present an alternative approach for the transfer of CVD-grown TMDs that can address the issues mentioned above. In this process, we replaced PMMA with cellulose acetate (CA) as a support layer and used buffered oxide etch (BOE) as an effective room-temperature etchant for SiO₂. The CA-transferred TMDs exhibit well-preserved structural integrity and unaltered optical properties as well as largely improved microscale and nanoscale cleanliness with reduced wrinkles and cracks. Furthermore, we integrated our CA-transfer method with a deterministic positioning system that allowed microprecision transfer of the TMD layers. For example, a WS₂–MoS₂ vertical heterojunction with an electronically coupled and uniform interface was successfully created. The CA-transfer technique developed in this work represents a cleaner alternative to the PMMA-transfer method, thus permitting atomic resolution characterizations and the implementation of novel applications of CVD-grown TMDs and their heterostructures.