Comparison of ZnO thin films deposited by three different SILAR processes
C Vargas-Hernandez, FN Jimenez-Garcia… - Microelectronics …, 2008 - Elsevier
ZnO thin films were deposited on amorphous glass substrates using successive ionic layer
adsorption and reaction (SILAR). The employed baths were ammonium zincate, with NH3
and NH4OH as complex agents and ZnSO4 and Zn (NO3) 2 as precursor sources. The
comparison between films deposited by three processes was studied by means of X-ray
diffraction (XRD), optical absorption, and micro Raman. The band gap is between 3.14 and
3.30 eV. By μ-Raman spectroscopy, the principal vibration modes around 435 and 579cm-1 …
adsorption and reaction (SILAR). The employed baths were ammonium zincate, with NH3
and NH4OH as complex agents and ZnSO4 and Zn (NO3) 2 as precursor sources. The
comparison between films deposited by three processes was studied by means of X-ray
diffraction (XRD), optical absorption, and micro Raman. The band gap is between 3.14 and
3.30 eV. By μ-Raman spectroscopy, the principal vibration modes around 435 and 579cm-1 …
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