Correlation between optoelectronic and structural properties and epilayer thickness of AlN
AlN epilayers were grown by metal organic chemical vapor deposition on sapphire
substrates. X-ray diffraction measurements revealed that the threading dislocation (TD)
density, in particular, the edge TD density, decreases considerably with increasing the
epilayer thickness. Photoluminescence results showed that the intensity ratio of the band
edge emission to the defect related emission increases linearly with increasing the epilayer
thickness. Moreover, the dark current of the fabricated AlN metal-semiconductor-metal deep …
substrates. X-ray diffraction measurements revealed that the threading dislocation (TD)
density, in particular, the edge TD density, decreases considerably with increasing the
epilayer thickness. Photoluminescence results showed that the intensity ratio of the band
edge emission to the defect related emission increases linearly with increasing the epilayer
thickness. Moreover, the dark current of the fabricated AlN metal-semiconductor-metal deep …
[PDF][PDF] Correlation between optoelectronic and structural properties and epilayer thickness of AlN
D Weyburne, QS Paduano, HX Jiang, JY Lin, J Li… - 2007 - ttu-ir.tdl.org
AlN epilayers were grown by metal organic chemical vapor deposition on sapphire
substrates. X-ray diffraction measurements revealed that the threading dislocation TD
density, in particular, the edge TD density, decreases considerably with increasing the
epilayer thickness. Photoluminescence results showed that the intensity ratio of the band
edge emission to the defect related emission increases linearly with increasing the epilayer
thickness. Moreover, the dark current of the fabricated AlN metal-semiconductor-metal deep …
substrates. X-ray diffraction measurements revealed that the threading dislocation TD
density, in particular, the edge TD density, decreases considerably with increasing the
epilayer thickness. Photoluminescence results showed that the intensity ratio of the band
edge emission to the defect related emission increases linearly with increasing the epilayer
thickness. Moreover, the dark current of the fabricated AlN metal-semiconductor-metal deep …
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