Nanoelectromechanical (NEM) switches are potential candidates for memory and logic
devices for low standby-current and harsh environment applications. Cryogenic operation of
these devices would allow to use them, eg, in space probes and in conjunction with
quantum computers. Herein, it is demonstrated that cryogenic application requirements such
as good flexibility and conductivity are satisfied by using Bi 2 Se 3 nanoribbons as active
elements in NEM switches. Experimental proof of principle NEM switching at temperatures …