Defect creation in amorphous HfO2 facilitated by hole and electron injection
J Strand, M Kaviani, AL Shluger - Microelectronic Engineering, 2017 - Elsevier
Abstract Using Density Functional Theory (DFT) calculations we modeled the mechanisms
of formation of oxygen vacancies and interstitial ions in amorphous HfO 2 under electron
and hole injection conditions. The results demonstrate that injected electrons and holes can
create strongly localised bipolaron states at intrinsic trapping sites in amorphous structure.
These bipolarons decompose into stable and mobile O vacancies and interstitial ions upon
thermal activation. These mechanisms can contribute to dielectric breakdown of gate oxide …
of formation of oxygen vacancies and interstitial ions in amorphous HfO 2 under electron
and hole injection conditions. The results demonstrate that injected electrons and holes can
create strongly localised bipolaron states at intrinsic trapping sites in amorphous structure.
These bipolarons decompose into stable and mobile O vacancies and interstitial ions upon
thermal activation. These mechanisms can contribute to dielectric breakdown of gate oxide …
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