The Ga₂S₃–GeS₂:Er₂S₃ films of various thicknesses (from 0.3 to 5 μm) were prepared by laser ablation. The deposed films were characterized with various diagnostic techniques: optical absorption spectroscopy, X-ray fluorescence spectroscopy, secondary ion mass spectroscopy and luminescence spectroscopy. Concentrations of rare-earth ions, gallium and germanium in the target bulk glass and in the films were similar. The composition of deposited films was uniform. The location of the fundamental absorption edge was in the range from about 350 to 550 nm and depended on deposition conditions. The UV irradiation led to a large photo bleaching effect. The luminescence spectrum of the deposited film was measured.