This paper presents the results of the development and use of a full bridge GaN high electron mobility transistor (HEMT) converter used in an inductive power transfer (IPT) application. Experimental results using a Si MOSFETs converter in an IPT setup has previously been reported. By using GaN HEMTs instead of Si MOSFETs, the converter efficiency can be increased over a broad range of operating points. Component selection regarding the gate isolation and low parasitics are discussed. The efficiency comparison between the Si and GaN converters shows that a GaN converter can outperform the Si in both soft and hard switching operation points if correctly designed.