The diffusion of thin, highly p‐doped layers in AlGaAs/GaAs single‐and double‐
heterostructures, grown by metalorganic vapor‐phase epitaxy, was studied with C‐V etch
profiling and secondary ion mass spectroscopy. The effect of different post‐growth heat
treatments was investigated and diffusion coefficients for both magnesium and zinc were
measured. It was found that Mg diffuses about twice as fast Zn and that the order of
magnitude of the diffusion coefficient is 10− 14 cm2 s− 1 at 900° C, the exact value being …