Domain wall motion in epitaxial Pb (Zr, Ti) O3 capacitors investigated by modified piezoresponse force microscopy
We investigated the time-dependent domain wall motion of epitaxial Pb Zr 0.2 Ti 0.8 O 3
capacitors 100 nm thick using modified piezoresponse force microscopy (PFM). We
obtained successive domain evolution images reliably by combining the PFM with switching
current measurements. We observed that domain wall speed (v) decreases with increases in
domain size. We also observed that the average value of v, obtained under applied electric
field (E app), showed creep behavior, ie,⟨ v⟩∼ exp [−(E 0∕ E app) μ] with an exponent μ …
capacitors 100 nm thick using modified piezoresponse force microscopy (PFM). We
obtained successive domain evolution images reliably by combining the PFM with switching
current measurements. We observed that domain wall speed (v) decreases with increases in
domain size. We also observed that the average value of v, obtained under applied electric
field (E app), showed creep behavior, ie,⟨ v⟩∼ exp [−(E 0∕ E app) μ] with an exponent μ …
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