Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries
Highly transparent and conducting Al-doped ZnO (AZO) films are prepared via sol-gel
method with a broad range of nominal Al-doping. The film porosity and morphology is
determined by the rate of temperature ramping during the drying of the gel phase. The
minimum resistivity is observed to occur around 1.5–2 at.% Al-doped films, irrespective of
the morphology and microstructure. It is found by local chemical analysis that Al tends to
segregate at the grain boundaries and above a critical concentration, the segregated Al …
method with a broad range of nominal Al-doping. The film porosity and morphology is
determined by the rate of temperature ramping during the drying of the gel phase. The
minimum resistivity is observed to occur around 1.5–2 at.% Al-doped films, irrespective of
the morphology and microstructure. It is found by local chemical analysis that Al tends to
segregate at the grain boundaries and above a critical concentration, the segregated Al …
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