Epitaxial growth of kesterite Cu2ZnSnS4 on a Si (001) substrate by thermal co-evaporation
Using thermal co-evaporation we have prepared epitaxial Cu 2 ZnSnS 4 (CZTS) films on Si
(001) substrates. A substrate temperature as high as 370° C and proper substrate cleaning
(HF-dip followed by thermal desorption of surface hydrogens) are found to be necessary for
the epitaxial growth. Detailed transmission electron microscopy measurements and X-ray
diffraction studies are used to reveal the orientation relation of the CZTS films with the
underlying silicon substrate, and the formation of defects within the CZTS layer.
(001) substrates. A substrate temperature as high as 370° C and proper substrate cleaning
(HF-dip followed by thermal desorption of surface hydrogens) are found to be necessary for
the epitaxial growth. Detailed transmission electron microscopy measurements and X-ray
diffraction studies are used to reveal the orientation relation of the CZTS films with the
underlying silicon substrate, and the formation of defects within the CZTS layer.
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