Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
G Tolstoy, P Ranstad, J Colmenares… - 2015 17th European …, 2015 - ieeexplore.ieee.org
2015 17th European Conference on Power Electronics and …, 2015•ieeexplore.ieee.org
SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to
improve the efficiency of resonant converters. The losses of the full-bridge inverter are well
below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to
reach even higher frequencies. An experimental setup is built and two different full-bridge
inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes
and one with SiC BJTs and SiC Schottky diodes.
improve the efficiency of resonant converters. The losses of the full-bridge inverter are well
below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to
reach even higher frequencies. An experimental setup is built and two different full-bridge
inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes
and one with SiC BJTs and SiC Schottky diodes.
SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.
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