Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide
In this work, polycrystalline silicon (poly-Si) thin films were synthesized using Au-induced
crystallization of amorphous silicon suboxide for the first time. The structure and elemental
composition of the substrate/Au/a-SiO 0.4 stacked structure annealed at 500–700° C were
investigated by transmission electron microscopy (TEM), Raman, and energy-dispersive X-
ray spectroscopy (EDX). TEM and Raman methods confirmed the formation of a poly-Si thin
film in the bottom layer (on the substrate) as a result of annealing. At the same time, TEM …
crystallization of amorphous silicon suboxide for the first time. The structure and elemental
composition of the substrate/Au/a-SiO 0.4 stacked structure annealed at 500–700° C were
investigated by transmission electron microscopy (TEM), Raman, and energy-dispersive X-
ray spectroscopy (EDX). TEM and Raman methods confirmed the formation of a poly-Si thin
film in the bottom layer (on the substrate) as a result of annealing. At the same time, TEM …
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