… , it is accomplished with selective silicon epitaxy, which is a … source for silicide contact
formation. In this study, a new … /drain regions, preferentially selective to the low-stress post-CMP …

… The epitaxial growth creates a raised diamond shaped S/D … resistance, mechanical stress
on the FinFET channel is one of … This project also uses the tungsten interconnects (Figure 16). …

… to see the first 22-nm FinFET products come onto the market. … The raised epitaxial
source-drains reduce device resistance, … tensile tungsten in the contacts to apply channel stress – …

… built, tungsten contacts. Close examina silicide is formed after the … raised epitaxial
source-drain and it appears that the crystalline d stress to enhance NMOS performa possible stress …

… Now that we are truly into the finFET generations, we have to … this appears to be the liner for
tungsten fill seen in in longer … epitaxial growth has also been used for the NMOS transistors. …

… Soon we expect to see the first 22-nm FinFET products. Also, … that stress is contributed by
strained tungsten in the contacts, … The raised epitaxial source-drains reduce device resistance, …

… It also depends on mechanical stress coming from raised S/D epi of the FinFET and hence
… a 3D p-FinFET structure (FL = 20nm,) having raised epitaxial SiGe SD and lateral Tungsten …

… and drain contacts are modified by etching and an epitaxial … to obtain a compressive stress
along the transistor channel. … contacts made of tungsten) of 14 nm n-channel (left) and p-…

… uniaxial compressive stress in the channel region and … FinFETs, the strain in the channel
is induced uniaxially by the SiGe stressors when the layers are grown to raise the source/drain …

… 39) compares different techniques like using stresssilicon … the contact formation made
with tungsten, no problems arise. … to the epitaxial growth used to create the raised source-drain …