Frontiers of mid-infrared lasers based on transition metal doped II–VI semiconductors
Journal of Luminescence, 2013•Elsevier
Recent progress in chromium and iron doped II–VI semiconductor materials makes them the
laser sources of choice when one needs a compact system with broad mid-IR tunability over
1.9–6μm. Output powers exceeding 10W, output energies 20mJ, pulse durations 80fs, peak
powers in excess of 1GW, and efficiency up to 70% were demonstrated in several Cr doped
semiconductors. The unique combination of technological and spectroscopic characteristics
makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This …
laser sources of choice when one needs a compact system with broad mid-IR tunability over
1.9–6μm. Output powers exceeding 10W, output energies 20mJ, pulse durations 80fs, peak
powers in excess of 1GW, and efficiency up to 70% were demonstrated in several Cr doped
semiconductors. The unique combination of technological and spectroscopic characteristics
makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This …
Recent progress in chromium and iron doped II–VI semiconductor materials makes them the laser sources of choice when one needs a compact system with broad mid-IR tunability over 1.9–6μm. Output powers exceeding 10W, output energies 20mJ, pulse durations 80fs, peak powers in excess of 1GW, and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable and ultrafast laser systems. This article reviews transition metal doped II–VI materials and recent progress in Cr- and Fe- doped solid-state mid-IR lasers.
Elsevier
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