GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
IEEE Electron Device Letters, 2003•ieeexplore.ieee.org
For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by
atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on
III-V compound semiconductors affords tremendous functionality and opportunity by
enabling the formation of high-quality gate oxides and passivation layers on III-V compound
semiconductor devices. A 0.65-μm gate-length depletion-mode n-channel GaAs MOSFET
with an Al 2 O 3 gate oxide thickness of 160/spl Aring/shows a gate leakage current density …
atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on
III-V compound semiconductors affords tremendous functionality and opportunity by
enabling the formation of high-quality gate oxides and passivation layers on III-V compound
semiconductor devices. A 0.65-μm gate-length depletion-mode n-channel GaAs MOSFET
with an Al 2 O 3 gate oxide thickness of 160/spl Aring/shows a gate leakage current density …
For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-quality gate oxides and passivation layers on III-V compound semiconductor devices. A 0.65-μm gate-length depletion-mode n-channel GaAs MOSFET with an Al 2 O 3 gate oxide thickness of 160 /spl Aring/ shows a gate leakage current density less than 10/sup -4/ A/cm 2 and a maximum transconductance of 130 mS/mm, with negligible drain current drift and hysteresis. A short-circuit current-gain cut-off frequency f T of 14.0 GHz and a maximum oscillation frequency f max of 25.2 GHz have been achieved from a 0.65-μm gate-length device.
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