Gallium oxide as an insulating barrier for spin-dependent tunneling junctions
Z Li, C De Groot, JH Moodera - Applied Physics Letters, 2000 - pubs.aip.org
Spin-dependent tunneling has been shown to occur through Ga 2 O 3 as the insulating
tunnel barrier. Magnetic tunnel junctions of the type Co/Ga 2 O 3/Ni 80 Fe 20 were prepared
by oxidizing thin metal layer of Ga in oxygen plasma and characterized. The highest junction
magnetoresistance observed was 18.2% at room temperature, increasing to 27.6% at 77 K.
The average barrier height was estimated to be about 2 eV, as opposed to over 3 eV for
junctions with Al 2 O 3 barrier of comparable quality. Otherwise these junctions behave …
tunnel barrier. Magnetic tunnel junctions of the type Co/Ga 2 O 3/Ni 80 Fe 20 were prepared
by oxidizing thin metal layer of Ga in oxygen plasma and characterized. The highest junction
magnetoresistance observed was 18.2% at room temperature, increasing to 27.6% at 77 K.
The average barrier height was estimated to be about 2 eV, as opposed to over 3 eV for
junctions with Al 2 O 3 barrier of comparable quality. Otherwise these junctions behave …
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